MPS diode can shield the electric field and reduce the leakage current of the Schottky barrier, by simultaneously improving the hole injection surge current capability. Compared with silicon Schottky devices, the forward voltage drop is only slightly increased under the same current handling conditions of the new diode, and the robustness is significantly improved.
Vishay Semiconductors devices adopt a hybrid PIN Schottky (MPS) structure design, which improves the energy efficiency of high-frequency applications by reducing switching losses. It is not affected by temperature changes. The diode can work at higher temperatures environment.
The device is suitable for power factor correction (PFC) freewheeling, buck-boost freewheeling and LLC converter output rectification in applications such as servers, telecommunications equipment, UPS and solar inverters, providing designers with high flexibility in system optimization. The diodes are available in 2L TO-220AC and TO-247AD 3L packages, with a rated current of 4A~40A, and can work at a high temperature of +175˚C.
