ST’s silicon carbide diodes: offer great flexibility to designers

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ST’s silicon carbide diodes range from 600 to 1200 V – as single and dual diodes – and feature unbeatable reverse recovery characteristics and improved VF. Available in a wide variety of packages, from D²PAK to TO-247 and the insulated TO-220AB/AC, they offer great flexibility to designers looking for efficiency, robustness and fast time-to-market.

ST’s automotive-grade 650 and 1200 V SiC diodes – AEC-Q101-qualified and PPAP capable – feature the lowest forward voltage drop (VF) on the market, for optimal efficiency in electric vehicle (EV) applications.

 

Products:

  • STPSC6H065
  • STPSC40H12CW
  • STPSC20H065CT
  • STPSC30H12CW

ST’s SiC Schottky diodes show a significant power-loss reduction and are commonly used in hard-switching applications such as high-end-server and telecom power supplies, while also intended for solar inverters, motor drives and uninterruptible power supplies (UPS).